Method for cleaning metal impurities on silicon substrate mixed with UV / O_3 cleaning and HF solution cleaning

摘要

The importance of silicon substrate cleaning is increasing with the increase in integration and performance of semiconductor devices. The present invention relates to a metal impurity on a silicon substrate by a dry and wet process in which dry and wet treatments are performed in order of Piranha cleaning, ultraviolet / ozone (UV / O ₃ ) cleaning, HF solution cleaning, and drying to clean the silicon substrate. It relates to a cleaning method of.