How to operate the DRAM controller with improved page rate

摘要

1. Technical field to which the invention described in the claims belongs;And an operation method of the DRAM controller in which the page hit rate is improved.;2. Technical challenges to be solved by the invention;There is provided a method of operating a DRAM controller of a semiconductor memory device having an improved page hit rate, which improves the problem that continuous access is not supported when the access of another bank is intervened in the access of a specific bank.;3. The point of the solution of the invention;A row address strobe signal and a column address strobe signal corresponding to the number of the DRAM banks to be controlled are allocated and a byte enable signal is generated for byte enable.;4. Important Uses of the Invention;And is suitably used for a method of operating a DRAM controller of a semiconductor memory device having an improved page hit rate.