1. The technical field to which the invention described in the claims belongs;To a level converter circuit of a semiconductor memory device for assuring output of stable data of a bi-directional MOS sense amplifier.;2. Technical challenges to be solved by the invention;And a sense amplifier level converter of a semiconductor memory device for ensuring stable output of data.;3. The point of the solution of the invention;In a sense amplifier level converter circuit of a semiconductor memory device for assuring output of stable data of a bi-directional MOSS sense amplifier to reduce noise and operating the sense amplifier at a high speed, the power supply voltage is received at the source and the sense amp output And a drain connected to the drain of the first feature MOSFET and a gate to receive a reference voltage to control a direct current to the signal of the first state, And a drain connected to a source of the second-type current-mode MOS transistor, a gate receiving a signal in the first state, and a source connected to a ground voltage, and a source-And the gate thereof receives the sense amp output signal And a drain connected to the drain of the fourth feature MOSFET and a gate for receiving a reference voltage to control a direct current to the signal of the second state, And a drain connected to a source of the fifth-type monos transistor, and a gate receiving the signal of the second state, and a source connected to a ground voltage.;4. Important Uses of the Invention;And is suitably used for a sense amplifier level converter of a semiconductor memory device.
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