首页> 外国专利> A method of generating stacking failure induced damage on the back surface of semiconductor wafer

A method of generating stacking failure induced damage on the back surface of semiconductor wafer

机译:在半导体晶片的背面上产生堆叠失败引起的损伤的方法

摘要

The present invention relates to a method of generating stacking-fault-inducel damage on a back surface by treating the back surface of a semiconductor wafer with loose hard material particles suspended in a liquid.;The characteristic of this method is to contact the hard material particles suspended in the back surface of the semiconductor wafer, and to drive the hard material particles inclined to the back surface so that these particles have a mainly radial component on the back surface of the semiconductor wafer under such a condition. To force it.
机译:本发明涉及一种通过用悬浮在液体中的松散的硬质材料颗粒处理半导体晶片的背面来在背面上产生堆叠故障感应损伤的方法。该方法的特征是使硬质材料接触这些颗粒悬浮在半导体晶片的背面中,并驱动硬质材料颗粒向背面倾斜,使得这些颗粒在这种条件下在半导体晶片的背面上主要具有径向成分。强迫它。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号