METHOD FOR THE GENERATION OF STACKING-FAULT-INDUCED DAMAGE ON THE BACK OF SEMICONDUCTOR WAFERS

摘要

A METHOD FOR THE GENERATION OF STACKING-FAULT-INDUCED DAMAGE ON THE BACK OF SEMICONDUCTOR WAFERS IS BY TREATING THE BACK (3) WITH LOOSE HARD-MATERIAL PARTICLES (6) WHICH ARE SUSPENDED IN A LIQUID (5) .THE BACK (3) OF THE SEMICONDUCTOR WAFER (2) IS BROUGHT INTO CONTACT WITH THE SUSPENDED HARD-MATERIAL PARTICLES (6) AND THE HARD-MATERIAL PARTICLES (6) ARE PROPELLED TANGENTIALLY TO THE BACK (3), UNDER WHICH CIRCUMSTANCES THEY EXERT ON THE BACK (3) OF THE SEMICONDUCTOR WAFER (2) FORCES WHICH ESSENTIALLY ONLY TANGENTIALLY DIRECTED COMPONENTS (FIG. 1)