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Manufacturing method of cobalt / paradium magneto-optical multilayer thin film by vacuum deposition method

机译:真空蒸镀法制造钴/对位磁光多层薄膜的方法

摘要

The present invention relates to a method for manufacturing a Co / Pd magneto-optical multilayer thin film used as an optical recorder recording medium, wherein a Pd buffer layer is formed on an indium oxide bottom layer using a vacuum deposition method when forming a magneto-optical multilayer thin film on a substrate. An object of the present invention is to provide a method for producing a Co / Pd magneto-optical multilayer thin film having a high coercive force characteristic and an excellent vertical magnetic hysteresis angular ratio without sputter cleaning by depositing a / Pd multilayer thin film.;In order to achieve the above object, the present invention provides a method for forming a Co / Pd magneto-optical multilayer thin film on a substrate, wherein the substrate is placed in a vacuum chamber, charged with indium oxide in an evaporation source, and then evaporated to oxidize the substrate. Depositing an indium bottom layer: removing the indium oxide by loading a vacuum chamber and charging evaporation sources Co and Pd, respectively, and evaporating Pd to deposit a Pd buffer layer on the indium oxide bottom layer: and Co and Pd on the Pd buffer layer The present invention relates to a method for producing a Co / Pd magneto-optical multilayer thin film using a vacuum deposition method comprising cross-evaporating and depositing a Co / Pd magneto-optical multilayer thin film.
机译:本发明涉及一种用作光记录器记录介质的Co / Pd磁光多层薄膜的制造方法,其中,当形成磁记录介质时,使用真空沉积法在氧化铟底层上形成Pd缓冲层。基板上的光学多层薄膜。本发明的目的是提供一种通过沉积/ Pd多层薄膜而无需溅射清洗的,具有高矫顽力特性和优异的垂直磁滞角比的Co / Pd磁光多层薄膜的制造方法。为了实现上述目的,本发明提供了一种在基板上形成Co / Pd磁光多层薄膜的方法,其中,将基板放置在真空室中,并在蒸发源中填充氧化铟,以及然后蒸发以氧化底物。沉积铟底层:通过分别装载真空室并给蒸发源Co和Pd充电,并蒸发Pd以在氧化铟底层上沉积Pd缓冲层:以及在Pd缓冲层上沉积Co和Pd来去除氧化铟。本发明涉及一种使用真空沉积法制备Co / Pd磁光多层薄膜的方法,该方法包括交叉蒸发并沉积Co / Pd磁光多层薄膜。

著录项

  • 公开/公告号KR970050274A

    专利类型

  • 公开/公告日1997-07-29

    原文格式PDF

  • 申请/专利权人 김종진;신창식;

    申请/专利号KR19950066217

  • 发明设计人 강정수;안희경;홍재화;정재인;

    申请日1995-12-29

  • 分类号G11B5/62;

  • 国家 KR

  • 入库时间 2022-08-22 03:16:45

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