METHOD FOR PRODUCING PHOTOSENSITIVE CELL FOR INFRA-RED REGION OF SPECTRUM

摘要

FIELD: electronic engineering; production of photodetectors of visible and infra-red radiation. SUBSTANCE: silicon photosensitive cell based on semiconductor doped with shallow-level donor impurities and deposited ohmic contacts is treated in medium containing free ions of hydrogen at temperature T = 320-600 K for time period sufficient for hydrogen ions to penetrate through entire volume of semiconductor; concentration of hydrogen ions at silicon-medium interface will be 410¹⁵ cm^-2. Treatment in hydrogen-containing medium in which compensating acceptor impurities, such as boron, are neutralized provides for cleaning of ship. This reduces degree of compensation and increases lifetime thereby improving detecting capability. EFFECT: improved detecting ability due to reduced noise.