METHOD FOR PRODUCING PHOTOSENSITIVE CELL FOR INFRA-RED REGION OF SPECTRUM

摘要

FIELD: electronic engineering; production of photodetectors of visible and infra-red radiation. SUBSTANCE: photosensitive semiconductor cell based on semiconductor heavily dopes with small-size impurity is held in the course of manufacture at temperature T=320-470 K in medium containing free hydrogen ions for 5 h until hydrogen concentration of ≥3x10¹⁶ cm^-3 is obtained at medium-semiconductor interface. If ohmic contacts are deposited after mentioned treatment, their deposition temperature does not exceed 470 K. EFFECT: improved detecting capability due to reduced dark current. 3 cl