首页> 外国专利> An integrated device with complementary ldmos power transistors, cmos and vertical, integrated pnp - structures in a hybrid approach, which is able to withstand relatively high supply voltages

An integrated device with complementary ldmos power transistors, cmos and vertical, integrated pnp - structures in a hybrid approach, which is able to withstand relatively high supply voltages

机译:带有互补ldmos功率晶体管,CMOS和垂直集成pnp结构的集成设备,采用混合方式,能够承受较高的电源电压

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