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Single crystals of cesium titanyl arsenate and their preparation

机译:钛氧基砷酸铯单晶及其制备

摘要

A flux process is disclosed for producing a single orthorhombic crystal of Cs1-xMxTiOAsO4 (where M is Na, K, Rb, and/or Tl and x is from 0 to 0.4) wherein the dimension of the crystal along each axis is at least about 2 mm, and wherein the product at the dimensions along the three axes is at least about 15 mm3. The process involves preparing a homogeneous melt containing the components for forming said crystal and a flux comprising oxides of Cs and As at a temperature no higher than the decomposition temperature of said orthorhombic crystal, the mole fraction of M relative to the total Cs+M in the melt being within the range of from 0 to about 0.2; introducing a seed crystal for said single crystal in the me activating the controlled crystallization on the seed crystal; and continuing the crystallization until formation of the single crystal is completed. Single crystals of Cs1-xMxTiOAsO4 (including crystals at least about 5 mmx5 mm 5 mm) are also disclosed.
机译:公开了一种用于制备Cs 1 -xM x TiOAsO 4(其中M为Na,K,Rb和/或Tl且x为0至0.4)的单斜方晶体的助熔剂方法,其中该晶体沿每个轴的尺寸至少为约1μm。 2mm,并且其中沿着三个轴的尺寸的乘积为至少约15mm 3。该方法涉及在不高于所述正交晶的分解温度的温度下制备包含用于形成所述晶体的组分和包含Cs和As的氧化物的熔剂的均质熔体,其中M相对于Cs + M的总摩尔比为M。熔体在0至约0.2的范围内;在熔体中为所述单晶引入籽晶;激活晶种上受控的结晶;并继续结晶直至单晶形成完成。还公开了Cs1-xMxTiOAsO4的单晶(包括至少约5mm×5mm×5mm的晶体)。

著录项

  • 公开/公告号DE69307703T2

    专利类型

  • 公开/公告日1997-05-15

    原文格式PDF

  • 申请/专利权人 DU PONT US;

    申请/专利号DE1993607703T

  • 发明设计人 CHENG LAP US;

    申请日1993-05-14

  • 分类号C30B9/00;C30B29/22;

  • 国家 DE

  • 入库时间 2022-08-22 03:12:52

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