Dual-waveband infrared detector with planar spatio-temporal coherence

摘要

The detector consists of elements each having a stack of semiconductor layers (16,18,20,21) forming two photodiodes connected electrically in series and reverse-biased. Each layer is brought out to a surface (22) substantially at right angles to the direction in which layers are stacked in a well (12) within the substrate (14). The n-type and p-type layers (16,20) are separated by a trough (18) of p-type material which in conjunction with the n-layer forms one photodiode. The other photodiode comprises the p-layer with its coating (21) of n-type material to which a contact (26) is made. Other contacts (28,30) are made to portions of the surface.