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Deposition of silicon nitrides by plasma-enhanced chemical vapor deposition
Deposition of silicon nitrides by plasma-enhanced chemical vapor deposition
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机译:通过等离子体增强化学气相沉积法沉积氮化硅
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摘要
A silicon nitride or silicon oxynitride film is deposited by plasma enhanced chemical vapor deposition from a precursor gas mixture of a silane, a nitrogen-containing organosilane and a nitrogen-containing gas at low temperatures of 300°-400° C. and pressure of 1-10 Torr. The silicon nitride films have low carbon content and low hydrogen content, low wet etch rates and they form conformal films over stepped topography.
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