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Method and apparatus for deposition of diamond-like carbon coatings on drills

机译:在钻头上沉积类金刚石碳涂层的方法和设备

摘要

The invention is a method and apparatus for the RF plasma deposition of diamond-like carbon (DLC) and related hard coatings onto the surface of drills; especially microdrills such as printed circuit board drills and printed wire board drills, using a mounting means connected to a source of capacitively coupled RF power. A key feature of the apparatus is that the drills to be coated are the only negatively biased surfaces in the capacitively-coupled system.PP According to the method, the surface of the drills to be coated are first chemically de- greased to remove contaminants, and inserted into the electronically masked coating fixture of the present invention. The electronically masked fixture includes the powered electrode, the portion of the drills to be coated, an electrically insulated spacer, and an electrically grounded shield plate. Next, the loaded fixture is placed into a plasma deposition vacuum chamber, and the air in said chamber is evacuated. Gas is added to the vacuum chamber, and a capacitive RF plasma is ignited, causing the surface of the drills to be sputter-etched to remove residual contaminants and surface oxides, and to activate the surface. Following the sputter-etching step, a silicon-containing material layer is deposited by capacitive RF plasma deposition. This silicon-containing material layer may be either an adhesion layer for subsequent deposition of DLC, or may be "Si-doped DLC" ("Si-DLC"). If this silicon-containing layer is an adhesion layer, the next step in the process is deposition of a top layer of either DLC or Si-DLC by capacitive RF plasma deposition.
机译:本发明是一种将金刚石状碳(DLC)和相关硬涂层RF等离子沉积到钻头表面上的方法和设备。特别是微型钻头,例如印刷电路板钻头和印刷线路板钻头,其使用连接到电容耦合射频功率源的安装装置。该设备的关键特征是,待涂覆的钻头是电容耦合系统中唯一的负偏置表面。

根据该方法,首先要对待涂覆的钻头表面进行化学脱脱处理。用油脂润滑以去除污染物,然后插入本发明的电子掩膜涂层夹具中。电子屏蔽的固定装置包括通电电极,钻头要涂覆的部分,电绝缘垫片和电接地屏蔽板。接下来,将加载的夹具放置到等离子体沉积真空室中,并将所述室中的空气抽空。将气体添加到真空室中,并点燃电容性RF等离子体,从而对钻头的表面进行溅射蚀刻,以去除残留的污染物和表面氧化物,并激活表面。在溅射蚀刻步骤之后,通过电容RF等离子体沉积来沉积含硅材料层。该含硅材料层可以是用于随后的DLC沉积的粘附层,或者可以是“ Si掺杂的DLC”(“ Si-DLC”)。如果该含硅层是粘附层,则该过程的下一步是通过电容性射频等离子体沉积来沉积DLC或Si-DLC的顶层。

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