首页> 外国专利> Semiconductor optical device with mesa structure which is surrounded laterally by insulating mask for preventing current from leaking directly from cladding layer to substrate and process of fabrication thereof

Semiconductor optical device with mesa structure which is surrounded laterally by insulating mask for preventing current from leaking directly from cladding layer to substrate and process of fabrication thereof

机译:具有台面结构的半导体光学器件及其制造工艺,该台面结构被绝缘掩模横向包围,以防止电流直接从包层泄漏到基板上

摘要

A semiconductor mesa structure including active, absorbing, or passive guide layer is surrounding laterally by insulating mask, and is buried by a cladding layer which extends over the insulating mask, and injected current flows through the cladding layer into the mesa structure without leakage from the cladding layer into a substrate so that the semiconductor optical device is improved in performance.
机译:包括有源,吸收或无源引导层的半导体台面结构被绝缘掩膜横向包围,并被覆盖在绝缘掩膜上的覆层掩埋,注入的电流流过覆层进入到台面结构中,而不会从绝缘层泄漏。将覆层覆盖到基板中,从而提高了半导体光学器件的性能。

著录项

  • 公开/公告号US5659565A

    专利类型

  • 公开/公告日1997-08-19

    原文格式PDF

  • 申请/专利权人 KITAMURA;SHOTARO;

    申请/专利号US19940280680

  • 发明设计人 SHOTARO KITAMURA;

    申请日1994-07-27

  • 分类号H01S3/18;

  • 国家 US

  • 入库时间 2022-08-22 03:09:30

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