Compact low-noise dynodes incorporating semiconductor secondary electron emitting materials

摘要

This invention relates to electron emitting semiconductor materials for use in dynodes, dynode devices incorporating such materials, and methods of making the dynode devices. In particular, the invention relates to emissive materials having an electron affinity that is negative and which have low resistivity. The invention also relates to electronic devices such as electron multipliers, ion detectors, and photomultiplier tubes incorporating the dynodes comprising the materials, and to methods for fabricating the electronic devices. The secondary electron emitters of the present invention comprise wide bandgap semiconductor films selected from diamond, AlN, BN, Ga.sub.1-y Al.sub.y N where 0≦y≦1 and (AlN).sub.x (SiC).sub.1-x where 0.2≦ x≦1. The films are preferably single crystal or polycrystalline. The films may be continuous or patterned.