METHOD FOR ETCHING SILICON, PRODUCTION OF SILICON MEMBER AND ETCHED SINGLE CRYSTAL SILICON

摘要

PROBLEM TO BE SOLVED: To provide an etching method of silicon by which generation of projection and roughness is prevented, a manufacturing method of a silicon member and etched single crystal silicon. ;SOLUTION: Silicon is etched by using an etchant added with a chelating agent. In this case, the chelating agent combines with metal ions and dissolved silicon itself in the etchant to prevent the metal ions and dissolved silicon from attaching to an etching surface and generating projection. Otherwise, silicon is etched by using the etchant added with ketone or aldehyde. In this case, hydrogen is consumed by reacting with ketone or aldehyde to restrain generation of bubbles.;COPYRIGHT: (C)1998,JPO