VAPOR PHASE GROWTH OF COMPOUND SEMICONDUCTOR THIN FILM AND VAPOR PHASE GROWTH APPARATUS BASED THEREON

摘要

PROBLEM TO BE SOLVED: To provide a method, prior to vapor phase growth of a compound semiconductor thin film, for enabling removal of such an unnecessary layer as an impurity or oxide film adhered or formed onto a compound semiconductor substrate or onto a crystal of the compound semiconductor thin film formed on the substrate, and simultaneously enabling suppression of re-evaporation of a family-V element having a high vapor pressure to prevent deterioration of surface morphology. ;SOLUTION: In the method, a compound semiconductor substrate containing family-V elements or a substrate having a compound semiconductor thin film containing family-V elements and formed thereon is processed using of a dissociation gas produced from an organic family-V compound expressed by a following formula: (Formula 1) where R¹, R² and R³ denote an identical or different alkyl groups or hydrogen atom, at last one of R¹, R² and R³ denotes an alkyl group, and V denotes a family-V atom.;COPYRIGHT: (C)1998,JPO