COMPOSITE STRUCTURE OF CRYSTALLINE OXIDE DIELECTRIC THIN FILM AND SINGLE CRYSTAL SILICON SUBSTRATE, ELECTRONIC DEVICE USING THE SAME, AND MANUFACTURE OF THEREOF

摘要

PROBLEM TO BE SOLVED: To realize an IS structure having a crystalline oxide dielectric layer having little leak current, a high breakdown voltage, and a sufficiently long life with the elapse of time against the breakdown voltage, that is, a composite structure of a crystalline oxide dielectric thin film and a single crystal silicon substrate. ;SOLUTION: In a composite structure in which a crystalline oxidc dielectric thin film 2 is grown on a single crystal silicon semiconductor substrate 1, the crystalline oxide dielectric thin film 2 is formed by a thin film (single film or stacked layer made of, for example, stabilized zirconia, cerium oxide, strontium titanate, magnesium oxide, or yttrium oxide) to which a heat treatment is performed in an active oxygen atmosphere after the growth.;COPYRIGHT: (C)1998,JPO