PRECURSOR FOR FORMING FERROELECTRIC THIN FILM, MANUFACTURE THEREOF, AND MANUFACTURE OF FERROELECTRIC THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a stable precursor for forming a ferroelectric thin film with high quality (such as high density) at low temperature. ;SOLUTION: A metal acetate and a metal alcoxide are dissolved in an organic solvent, then while the organic solvent is replenished in the solution dissolved, they are heated and distilled. A precursor for forming a ferroelectric thin film containing a metal organic compound formed by the reaction and the non-reacted remaining metal acetate is obtained. The precursor for forming a ferroelectric thin film containing 52 mole % or less of non-reacted remaining metal acetate of the total metal acetate used is manufactured. By heating the precursor obtained, a ferroelectric thin film is manufactured.;COPYRIGHT: (C)1998,JPO