METHOD FOR IMPROVING INTERFACE CONDUCTIVITY OF COPPER, AND COPPER CONDUCTOR INTERFACE FORMED BY IT

摘要

PROBLEM TO BE SOLVED: To improve interface conductivity of a copper provided on IC surface and via conductivity of an inter-layer dielectric, by exposing the surface on which a selected copper is formed to a low energy ion source, and by removing a contaminant from the surface, for the copper to be supplied on the exposed surface. ;SOLUTION: A surface on which a selected copper is formed is provided (S10). The surfaces remarkably showing conductivity are provided in an IC selected region. The surface where a selected copper is formed is exposed to a low energy ion source (S12). In response to the expose to the low energy ion, a contaminant is removed from the surface forming a copper (S14). On the surface where an exposed copper is formed, a CVD copper is supplied (S16). Thus, an IC, that is a product, wherein an electric conductivity between the copper deposited by ion exposure and the surface on which the copper is formed is improved is provided (S18).;COPYRIGHT: (C)1998,JPO