首页> 外国专利> DESIGN METHOD FOR MICROWAVE HIGH OUTPUT POWER AMPLIFIER

DESIGN METHOD FOR MICROWAVE HIGH OUTPUT POWER AMPLIFIER

机译:微波高输出功率放大器的设计方法

摘要

PROBLEM TO BE SOLVED: To provide the design method for the microwave high output power amplifier which is simply realized and from which a maximum power is obtained while satisfying almost the matching with a load. ;SOLUTION: The design method of the microwave high output power amplifier has a step (1) where an optimum load resistor (r1) to obtain a non-distortion maximum power is obtained through drawing based on an I-V characteristic (DC characteristic) between a drain and a source of a GaAS FET, a step (2) where an S parameter providing a maximum output of the GaAs FET is measured by a small signal operation, a step (3) where each equivalent circuit constant is decided so as to be in matching with the S parameter obtained as above, and a step (4), where the equivalent circuit constant Rds (equivalent drain-source resistance) obtained as above is replaced with an optimum load resistance (r1) obtained in the step (1) above and the actual circuit design is conducted finally. The microwave high output power amplifier is designed by the steps as above.;COPYRIGHT: (C)1998,JPO
机译:要解决的问题:提供一种微波高输出功率放大器的设计方法,该方法简单实现,并从中获得最大功率,同时几乎满足与负载的匹配。 ;解决方案:微波高输出功率放大器的设计方法具有步骤(1),其中,通过基于a和i之间的IV特性(DC特性)进行绘制,可以获得获得无失真最大功率的最佳负载电阻(r1)。 GaAS FET的漏极和源极,通过小信号操作测量提供GaAs FET最大输出的S参数的步骤(2),确定每个等效电路常数的步骤(3)为与上面获得的S参数匹配,然后执行步骤(4),其中将上面获得的等效电路常数R ds (等效漏源电阻)替换为最佳负载电阻(r1)在上述步骤(1)中获得的)最终进行实际的电路设计。微波高输出功率放大器是按上述步骤设计的。版权所有:(C)1998,日本特许厅

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号