30R (H) phase - poritaipoidosaiaron and its synthetic manner

摘要

PURPOSE:To obtain the thin film of the title sialon of a hexagonal system haying specific unit cells at a low temp. by using a gaseous mixture composed of an Al halide and gases contg. N, O and Si atoms and executing synthesis by a plasma CVD method. CONSTITUTION:The gases of AlBr3 introduced by SiH4 and H2 diluted with N2O and N2 are supplied into a reaction chamber A from a central pipe 6a, intermediate pipe 6b and outer pipe 6c of the triple pipe nozzles of, for example, a plasma CVD device. The deposition of the synthesized matter on the inside walls of the tubes is prevented in this way. Gaseous Ar is separately supplied to the chamber A so that the stable synthesis is executed. The gaseous mixture composed of the N2O, SiH4 and AlBr3 is discharged by microwaves and is thereby converted to plasma, by which the film of the sialon is formed on the surface of a substrate 3. The film of 30R(H) phase-polytypoid sialon consisting of the respective elements of the Al Si, N, and O of the hexagonal structure having the unit cells of 8.0326nm intermolecular distance in the c-axis direction is synthesized at the relatively low temp. in this way.