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FORMATION OF COPPER-SILVER ALLOY COATING FILM AND COMPOSITION FOR FORMING COPPER-SILVER ALLOY COATING FILM

机译:铜银合金镀膜的形成及组成

摘要

PROBLEM TO BE SOLVED: To uniformly form coating film with low resistance at a relatively low reacting temp. and at a high film coating forming speed, in the formation of Cu-Ag alloy coating film, by using an organic Cu (I) compound and an organic Ag (I) compound with ligands different mutually. ;SOLUTION: The vapor of an organic Cu (I) compound shown by the formula I and the vapor of an organic Ag (I) compound shown by II are decomposed to accumulate a Cu-Ag alloy on a substrate, by which Cu-Ag alloy coating is formed. In the formula I and formula II, L1 and L2 denote olefins, alkynes or organic phosphines substituted with trimethylsilyl, and (n) denotes 2, 3 or 4. Furthermore, the ligands L1 of the compound in the formula I and the ligands L2 of the compound in the formula II are mutually different, and at least either of the L1 and L2 is ethane or propane substituted with trimethylsilyl groups. The compound in the formula I and the compound in the formula II are vaporized in separate vaporizing chambers, and after that, each vapor is introduced into a coating film forming chamber together with a carrier gas and is decomposed.;COPYRIGHT: (C)1997,JPO
机译:解决的问题:在相对较低的反应温度下均匀地形成具有低电阻的涂膜。并且,通过使用配体互不相同的有机Cu(I)化合物和有机Ag(I)化合物,以高成膜速度形成Cu-Ag合金涂膜。 ;解决方案:将式I所示的有机Cu(I)化合物的蒸气和II所示的有机Ag(I)化合物的蒸气分解,以在基板上积聚Cu-Ag合金,从而使Cu-Ag形成合金涂层。式I和式II中,L 1 和L 2 表示被三甲基甲硅烷基取代的烯烃,炔烃或有机膦,(n)表示2、3或4。 ,式I中化合物的配体L 1 和式II中化合物的配体L 2 互不相同,并且至少一个L < Sup> 1 和L 2 是被三甲基甲硅烷基取代的乙烷或丙烷。式I的化合物和式II的化合物在单独的汽化室中汽化,然后,将每种蒸汽与载气一起引入涂膜形成室中并分解。;版权:(C)1997 ,日本特许厅

著录项

  • 公开/公告号JPH09324271A

    专利类型

  • 公开/公告日1997-12-16

    原文格式PDF

  • 申请/专利权人 MITSUBISHI MATERIALS CORP;

    申请/专利号JP19960145927

  • 发明设计人 SAI ATSUSHI;OGI KATSUMI;SATO MASAMITSU;

    申请日1996-06-07

  • 分类号C23C16/18;H01L21/285;

  • 国家 JP

  • 入库时间 2022-08-22 03:00:17

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