Array type infrared detector and its production manner

摘要

PROBLEM TO BE SOLVED: To provide a photodiode array which is lessened in dark current induced by dislocation to be excellent in characteristics. SOLUTION: A CdTe buffer layer 2, a P-HgCdTe layer 3 transparent, enough (large in Cd composition) to infrared rays to detect, and a P-HgCdTe layer 4 high in sensitivity to infrared rays are successively grown in crystal on a dissimilar substrate 1 of GaAs or Si or the like for the formation of a laminated crystal. The laminated crystal is subjected to an annealing treatment of usual heat cycle, and then a diode array is formed. Dislocations are moved near to an interface between the P-HgCdTe layer 3 of large Cd composition and the CdTe buffer layer 2, and the P-HgCdTe layer 4 high in sensitivity to infrared rays is turned low enough in dislocation. Even if minority carriers generated by dislocations induced in the P-HgCdTe layer 3 near to its interface with the CdTe buffer layer 2 are diffused, they are restrained from reaching to a PN junction, so that a dark current can be lessened.