PURPOSE: To increase the rate of a crystal growth by taking a solvent in a vessel, heating the solvent by a radiant heat from a heater positioned at the outside of the vessel and blocking the radiant heat from the heater at the circumference of the crystal precipitating part. ;CONSTITUTION: This method for a liquid phase crystal growing comprises loading a polycrystalline II-VI group compound such as ZnSe as a source crystal 2 and a Se-Te mixture as a solvent 3 into a crystal growing vessel 1, evacuating the inside of the crystal growing vessel 1 to a high vacuum while keeping the source crystal 2 by a difference in level K and sealing the open end of the vessel, then winding a radiant heat blocking material 9 directly and cylindrically on the upper surface of a heat sink 6 made of carbon, etc., and on the wall surface of the vessel 1 at the circumference of the crystal precipitating part while making the upper surface of a seed crystal 5 as a center, placing and heating the vessel in an electric furnace made by winding a heater 8 around a furnace core tube 7 to dissolve the source crystal 2 until its saturation in the solvent 3, transferring it by diffusion to a low temperature part caused by the reduction of the radiant heat to make the state of a supersaturation for growing crystal in contact with the seed crystal to obtain a single crystal at a large crystal growth rate.;COPYRIGHT: (C)1996,JPO
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