PURPOSE: To obtain a grown crystal of a columnar shape having a front surface of nearly a plane form by forming a temp. difference above and below a solvent, arranging a source crystal in the high-temp. part of the solvent and effective crystal growth in a specific form in the low-temp. part of the solvent. ;CONSTITUTION: A vessel 1 for crystal growth is arranged in an electric furnace set with a prescribed temp. gradient. This electric furnace forms a vertical type space capable of housing the vessel 1 for crystal growth. The temp. of the position where the source crystal 2 is arranged in the electric furnace is expressed by Ts and the temp. of the part where the crystal growth on the surface of the seed crystal 5 arises is expressed by Tg. The source crystal 2 is dissolved down to the satd. solubility in the solvent 3 at the source temp. Ts. The source crystal components diffuse into the solvent and move to the low-temp. part. The satd. solubility is low in the low-temp. part and, therefore, the soln. is made into a supersatd. soln. The supersatd. soln. having the proper supersaturation degree comes into contact with the seed crystal 5, by which the crystal growth is induced on the seed crystal 5.;COPYRIGHT: (C)1996,JPO
展开▼
