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Due to microwave plasma CVD modulo the diamond film synthesizer unit

机译:由于采用微波等离子CVD,模制金刚石薄膜合成器单元

摘要

PURPOSE:To efficiently form a diamond film on a large-area substrate by introducing a microwave into a reaction chamber so that the electric field direction is paralleled with the substrate surface. CONSTITUTION:A gaseous mixture of hydrocarbons and hydrogen or the mixture added, as required, with another additive gas is introduced into the reaction chamber 13 from a gas supply pipe 14, and discharged from an exhaust pipe 15 to keep the reaction chamber 13 at a specified pressure. The substrate 18 is placed on the substrate holder 17 in the reaction chamber 13 with the surface at right angles to the traveling direction W2 of the microwave, and the surface of the substrate 18 is paralleled with the direction of the electric field E2 of the microwave. As a result, a high-power microwave with the uniform electric field E2 is present on the surface of the substrate 18, long-sized plasma is produced, and a uniform diamond film having good crystallinity can be synthesized and formed on the surface of the large-area substrate 18.
机译:目的:通过将微波引入反应室,使电场方向与基板表面平行,以在大面积基板上有效地形成金刚石膜。组成:碳氢化合物和氢气的气态混合物,或根据需要与另一种添加气体混合的混合物,从气体供应管14引入反应室13中,并从排气管15排出,以保持反应室13指定压力。将基板18以与微波的行进方向W2成直角的方式放置在反应室13内的基板支架17上,并且基板18的表面与微波的电场E2的方向平行。 。结果,在基板18的表面上存在具有均匀电场E2的大功率微波,产生了长尺寸的等离子体,并且可以合成具有良好结晶性的均匀金刚石膜并形成在基板18的表面上。大面积基板18。

著录项

  • 公开/公告号JP2719929B2

    专利类型

  • 公开/公告日1998-02-25

    原文格式PDF

  • 申请/专利权人 電気興業株式会社;

    申请/专利号JP19880185111

  • 发明设计人 大平 義和;石堀 宏一;

    申请日1988-07-25

  • 分类号C23C16/26;C23C16/50;C30B29/04;

  • 国家 JP

  • 入库时间 2022-08-22 02:59:38

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