A method of forming a single crystal magnesia spinel film

摘要

PURPOSE:To improve crystallizability and surface homology by a method wherein, when a single crystal magnesia spinel film is subjected to vapor growth, nitrogen suboxide is used as oxidation gas, and nitrogen is used as carrier gas. CONSTITUTION:In a conventional CVD system, N2O is used as oxidation gas, and N2 is used as carrier gas. An Al source 5, a MgCl2 source 6, and an Si substrate 11 are heated and kept at required temperatures by resistance heating furnaces 13-15, respectively. The required amount of HCl, N2 is made to flow into a first source pipe 3. That of N2 is made to flow into a second source pipe 4, while that of N2O+N2 is made to flow into a supply inlet 7. Thus, reaction is made to continue for a required interval, Thereby a single crystal magnesia spinel film excellent in crystallizability and surface homology is epitaxially grown on the substrate 11.