FABRICATION OF SILICA-BASED OPTICAL DEVICES AND OPTO-ELECTRONIC DEVICES

摘要

PCT No. PCT/AU95/00811 Sec. 371 Date Feb. 12, 1998 Sec. 102(e) Date Feb. 12, 1998 PCT Filed Dec. 1, 1995 PCT Pub. No. WO96/33429 PCT Pub. Date Oct. 24, 1996The present invention relates to a method of fabricating optical devices and in particular to a method of fabricating integrated opto-electronic devices, and to an opto-electronic device. A plasma enhanced chemical vapor deposition process (PECVD) is used to deposit an optical device integrated in silicon onto an electronic device fabricated in silicon. Relatively low temperatures are utilized and, in order to reduce losses of a waveguide in the optical device in the wavelength range 1.50 to 1.53 mu m, the deposition process is carried out in the absence of nitrogen. An optical device is disclosed which comprises an integrated construction incorporating an optical waveguide in silica and a photonic transducer in silicon.