Drain-source zero voltage sensing device using sensing MOS transistor

摘要

The present invention relates to a drain-to-source zero voltage sensing device using a sensing MOS transistor, and more particularly to a sensing MOS transistor having a drain and a source connected between an external power supply terminal and ground, A first resistor connected between the source of the MOS transistor and the bias power input terminal and a second resistor connected between the source of the MOS transistor for sensing and the ground.;Therefore, the present invention has the effect of detecting the point where the voltage between the drain and the source becomes zero voltage at a low voltage by using the sensing MOS transistor.