The present invention relates to optimizing processing by pulse plasmas.;The present invention shifts the initial frequency of the rising of each pulse to a higher level than the normal time in accordance with the on-timing of the high-frequency power pulse for plasma excitation (Fig. 4A) (Fig. 4B). As a result, the high-frequency power pulses are matched to the high resonance frequency in a state in which there is no plasma in the processing chamber or under a lean state, so that the ignition performance of the pulse plasma becomes high.;The present invention controls a high frequency power pulse for bias so that the maximum value, the minimum value, or the average value of the electric potential on the processing surface of the object to be processed becomes a predetermined value or less. As means for this control, there are a means for controlling the output waveform of the high-frequency power pulse for bias and a means for controlling the frequency of the high-frequency power pulse for bias. By this control, damage to the object to be treated due to impingement of ions on the object to be treated is alleviated, and uniform plasma processing is performed.
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