Forming a gap between the source and / or drain regions of an insulator-semiconductor (SOI) field-effect transistor that is preferably thinner than the thickness of the depletion region, which typically surrounds the source and / or drain regions biased at zero volts, Emitter bipolar transistor formed in the SOI field effect transistor is only transiently reduced during the operating mode in which the field effect transistor governs normal operation of the field effect transistor and also the effective base emitter junction capacitance is transiently increased. The transient reduction of this gain, coupled with the transient reduction of the high-frequency response, is sufficiently compatible with other techniques to reduce parasitic bipolar current spikes to a greater extent than previously achieved and also to reduce such current spikes . The gap-containing transistor structure is applied to an insulator-semiconductor-complementary metal-oxide-semiconductor (SOICMOS) SRAM, effectively suppressing the half-selective recording disturbing effect while maintaining the overcharge storage and the floating body effect in the transistor.
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