Silicon on insulator field effect transistor and method for protecting silicon on insulator device from electrostatic discharge

摘要

A body-coupled gated diode for a silicon-on-insulator (SOI) technique according to the present invention is disclosed. The body connection gate diodes are formed from SOI field effect transistors. The body, gate and drain of the SOI field effect transistor are connected together to form the first terminal of the diode. The source of the SOI field effect transistor forms the second terminal of the diode. NFET and PFET can be used to make diodes. An SOI circuit comprising at least one body-connected gate diode formed from an SOI field effect transistor provides electrostatic discharge (ESD) protection characteristics and ideal diode characteristics.