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METHOD FOR MANUFACTURING MATERIAL FOR COPY ALLOY SEMICONDUCTOR LEAD FRAME HAVING HIGH STRENGTH AND HIGH ELECTROPHIC
METHOD FOR MANUFACTURING MATERIAL FOR COPY ALLOY SEMICONDUCTOR LEAD FRAME HAVING HIGH STRENGTH AND HIGH ELECTROPHIC
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机译:具有高强度和高电性的合金半导铅框架材料的制造方法
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摘要
The present invention relates to a method of manufacturing a Cu-Ni-Si-P-Ti based copper alloy lead frame material, which is characterized by having a tensile strength of 60 kg / mm 2 and a lead frame material And the type and behavior of the precipitates contributing to the strengthening were investigated. It was confirmed that the effects of the processing on the precipitation reaction and the effect of the crystal grains in the crystal grains as the F-TMT process (NiTi, S-Ni, Ni-Si, and Ni-Ni)2Si) to manufacture a material for a copper alloy semiconductor lead frame having high strength and high electrical conductivity.
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机译:本发明涉及一种Cu-Ni-Si-P-Ti基铜合金引线框架材料的制造方法,其特征在于具有60kg / mm 2的拉伸强度和引线框架材料以及其类型和性能研究了有助于强化的析出物。确认了作为F-TMT工艺(NiTi,S-Ni,Ni-Si和Ni-Ni)2,该处理对沉淀反应的影响和晶粒中的晶粒的影响2 Sub> Si)来制造具有高强度和高导电率的用于铜合金半导体引线框架的材料。
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