Low power on-chip voltage reference circuit

摘要

The present invention provides a low-power on-chip voltage reference circuit in a 0.5 μm DRAM process that cannot utilize BJT or depletion MOS. The low voltage reference circuit of the present invention using a PTAT (absolute temperature relative) voltage source and VT generator consists only of an incremental MOS transistor and achieves significantly better performance at total currents less than 8 mA and external supply voltages in the range of 2.8 to 4 V. can do.;The measured temperature coefficient is about 360 ppm / ° C in the temperature range of 0 ° C to 100 ° C.