PHOTOMASK WITH DEVELOPMENT MEASURING PATTERN AND MEASURING METHOD THEREOF

摘要

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photomask having a development rate measurement pattern for measuring development rates at different regions of a wafer when forming a photomask pattern by a photolithography process in a manufacturing process of a semiconductor device and a development rate measurement method. In any one area divided into two by dividing the predetermined area in the center of the photomask Type pattern, the other area A plurality of pattern patterns are formed of the same material as the photomask forming material, and a development rate measurement pattern including a pattern formed by gradually varying the size of the pattern in the vertical and horizontal directions is provided to easily and quickly check the development uniformity of the developer. If it is necessary to adjust the developing rate between developing units, it can be easily adjusted and the complexity of the procedure or time saving can be achieved.