The present invention relates to a method that can maintain a flat surface using a solution in the surface mirror treatment, which is an important factor for the application of potassium arsenic (GaAs) in the fabrication of ultra-high density devices such as silicon (Si) It is about. During etching and surface treatment by sulfur, we propose a method to make nanometer-scale flatness by optimizing water and surface chemical reaction and sulfur treatment time.
展开▼
