Vertical diffusion furnace combined with oxide film growth process and LP CVD process

摘要

In particular, the present invention relates to a vertical diffusion furnace, and more particularly, to a vertical diffusion furnace capable of selectively performing an oxide film growth process and a low pressure vapor deposition (LP CVD) process in a single vertical diffusion furnace, .;It is an object of the present invention to provide a vertical type diffusion furnace for both oxidation and LP CVD processes in which an oxide film growth process and an LP CVD process can be performed in a single combined diffusion furnace.;The advantage of the present invention is that the vertical diffusion furnace is used to sequentially perform the oxide film growth process and the LP CVD process to reduce the amount of unnecessary materials and wafers to be loaded on the wafer and to reduce the occupied area occupied by the equipment There is an effect.