HIGH VOLTAGE LEVEL SHIFTER FOR SWITCHING HIGH VOLTAGE IN NON-VOLATILE MEMORY INTEGRATED CIRCUITS FOR HIGH VOLTAGE SWITCHING OF NON-VOLATILE MEMORY INTEGRATED CIRCUIT

摘要

High-voltage level shifters use only low-voltage PMOS devices and low-voltage NMOS devices. The high voltage level shifter is designed to provide the high voltage almost equally between the PMOS devices (P1-P4) and between the MNOS devices (N1-N4) to meet the device electrical specifications of the low voltage MOS device for various breate-Used to distribute. Also, the layout technique is used to achieve much higher junctions of the N + drain-P substrate and better gate side diode breakdown of the NMOS devices (N1, N2).