Method for controlling a nonvolatile ferroelectric memory cell that induces a large amount of electrical charge representing data bits

摘要

A potential level is applied between both electrodes of the capacitor (FA / FB / FC / FD) to divide the ferroelectric layer sandwiched between the electrodes, and then the capacitor and the field effect transistor TA1 / TB1 / CA / BC / CC / CD) between the nodes (TC1 / TD1 / TD1) is made to be in a floating state so that a large amount of charge is induced to the node by both the ferroelectric component and the high dielectric whole component of the spacer.