Method for forming capacitor in analog process using chemical vapor deposition method

摘要

The present invention relates to a method for forming a capacitor having an analog structure of a semiconductor device, the method comprising: preparing a substrate having an insulating oxide film formed on a top surface of a semiconductor substrate and having an ion-implanted polycrystalline silicon layer formed thereon by etching; Depositing a silicon dioxide film on the upper surface of the substrate on which the polycrystalline silicon layer is formed by chemical vapor deposition; Stacking a polycrystalline silicon layer on the upper surface of the stacked silicon dioxide film and implanting impurities; Forming an impurity-doped polycrystalline silicon layer by patterning the impurity-implanted polycrystalline silicon layer to form an analog circuit; The present invention provides a method of forming a capacitor in an analogue process using a chemical vapor deposition method, wherein the polycrystalline silicon residue generated in the second polycrystalline silicon layer etching process is not generated. Therefore, an appearance defect, an electrical short circuit, There is an advantage of improving defective improvement.