PROCESS AND DEVICE FOR MEASUREMENT IN SITU OF ELECTROMAGNETIC PROPERTIES OF VARIOUS TREATED MATERIALS WITH USE OF CHARACTERISTIC OF CUT-OFF FREQUENCY AND ANALYSIS

摘要

FIELD: measurement technology. SUBSTANCE: process of measurement in situ of electromagnetic properties of various treated materials with use of characteristic of cut- off frequency and analysis provides for following stages: passage of treated material through measurement cell sensitive to frequency, action with electromagnetic energy generated by multifrequency source on treated material, such control over multifrequency source that frequency of signal can be changed to generate output signal having distinctive amplitude-frequency characteristic, detection of signal and its conversion to digital representation, analysis of digital representation of signal to determine cut-off frequency, determination of accuracy of cut-off characteristic with use of mathematical algorithms, determination of parameters of examined material on basis of measured cut-off frequency and accuracy of cut-off characteristic, computation and visualization of required property of material, for instance, dielectric permeability and conductivity of material, content of moisture in material with the aid of calibration data or equation loaded into storage, determination of material density with use of attenuation of transmission band. Device for realization of process includes source to generate controlled electromagnetic energy having stable selected frequencies, chamber for measurement of properties of material functionally coupled to mentioned source and so manufactured that it establishes cut-off condition in working limits of mentioned source, detector functionally coupled to chamber, processor for analysis of frequency characteristic of cut-off frequency. Chamber for measurement can be made hollow and rectangular in the form of waveguide where dielectric and conductive treated material are placed. Slot microstrip lines can be used for connection. EFFECT: increased functional efficiency of process and device. 32 cl, 41 dwg