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A semiconductor device with gradients - band gap bete - znse ohmic contact for a ii - vi semiconductor
A semiconductor device with gradients - band gap bete - znse ohmic contact for a ii - vi semiconductor
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机译:具有梯度的半导体器件-带隙贝特-II-VI半导体的Znse欧姆接触
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摘要
The present invention relates to semiconductor devices with ohmic contact to ZnSe-based layers and lasers derived therefrom wherein BeTe is used in a graded band gap layer. Preferably, an ohmic contact layer of BeTe-containing graded composition is used which consists essentially of Be.sub.x Zn.sub.1-x Te.sub.x Se.sub.1-x wherein x is within the range of 0 and 1 selected so as to provide substantial lattice matching to the lattice structure c the substrate. Specifically, Be.sub.x Zn.sub.1-x Te. sub.x Se.sub.1-x graded gap semiconductor layers are provided for application as ohmic contacts to p-type ZnSe, ZnS.sub.x Se. sub.1-x, Zn. sub.1-x Cd.sub.x S, Zn.sub.1-x Cd.sub.x S.sub.y Se.sub.1-y, Zn.sub.1-x Mg. sub.x S.sub.y Se.sub.1-y (wherein x and y are a number selected from 0 to 1) and other II-VI compound semiconductors used in lasers grown on GaAs substrates. Due to the close lattice match to GaAs substrate, graded (BeTe).sub.x (ZnSe).sub.1-x contact allow for the entire device structure to be grown within the pseudomorphic limit.
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机译:本发明涉及与ZnSe基层具有欧姆接触的半导体器件和由其衍生的激光器,其中BeTe用于梯度带隙层中。优选地,使用含BeTe的渐变组合物的欧姆接触层,其基本上由Be x Zn 1-x Te x Se 1-x组成,其中x在0的范围内选择1和1以便提供与衬底的晶格结构基本匹配的晶格。具体而言,Be x Zn 1-x Te。提供sub.x Se1-sub-x梯度间隙半导体层,以作为与p型ZnSe,ZnSx Se的欧姆接触的应用。 1-x,Zn。 sub.1-x Cdsub.x S,Znsub.1-x Cdsub.y Se.sub.1-y,Znsub.1-x Mg。 Sub x y Se 1-y(其中x和y是从0到1的数字)以及在GaAs衬底上生长的激光器中使用的其他II-VI化合物半导体。由于与GaAs衬底的晶格匹配紧密,渐变(BeTe)x(ZnSe)sub.1-x接触允许整个器件结构在拟晶极限内生长。
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