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Control of di/dt and dv/dt in a MOS-gated transistor by gate current adjustment

机译:通过栅极电流调节控制MOS门控晶体管中的di / dt和dv / dt

摘要

To turn on a Mos-gated transistor, such as an inductively-loaded MOSFET 418 or IGBT in a converter, a current generator 411 coupled to the gate of the transistor 418 is enabled to generate a first current in dependence on a first resistor 413 and is subsequently enabled to generate a second current in dependence on a second resistor 414. Switchover 412 between these two gate currents is made when the transistor drain-source voltage begins to fall, indicating transition from the current-change phase to the voltage change phase of the switching sequence (figure 1B). The turn-off sequence is similar (figure 1C). Closed-loop control of the voltage and current slopes may be provided; the voltage slope may be sensed by a capacitor 417 connected to the transistor drain, while the current slope may be sensed by the inductive reactance of a bond wire (figure 6).
机译:为了导通诸如转换器中的电感性负载的MOSFET 418或IGBT之类的Mos门控晶体管,耦合到晶体管418的栅极的电流产生器411能够产生取决于第一电阻器413和第一电阻器413的第一电流。随后,使第二栅极电流能够取决于第二电阻器414而产生第二电流。当晶体管的漏极-源极电压开始下降时,在这两个栅极电流之间进行切换412,指示从电流变化阶段到电压变化阶段的转变。切换顺序(图1B)。关断顺序相似(图1C)。可以提供电压和电流斜率的闭环控制。电压斜率可以通过连接到晶体管漏极的电容器417感测到,而电流斜率可以通过键合线的感抗来感测到(图6)。

著录项

  • 公开/公告号GB2318467A

    专利类型

  • 公开/公告日1998-04-22

    原文格式PDF

  • 申请/专利权人 * INTERNATIONAL RECTIFIER CORPORATION;

    申请/专利号GB19970022243

  • 发明设计人 STEFANO * CLEMENTE;

    申请日1997-10-21

  • 分类号H03K17/16;G01R19/12;

  • 国家 GB

  • 入库时间 2022-08-22 02:41:25

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