首页>
外国专利>
Controllable isotropic plasma etching technique for the suppression of stringers in memory cells
Controllable isotropic plasma etching technique for the suppression of stringers in memory cells
展开▼
机译:可控各向同性等离子刻蚀技术,用于抑制存储单元中的纵梁
展开▼
页面导航
摘要
著录项
相似文献
摘要
In the manufacture of memory cells, horizontal etching is controlled in a manner which prevents the formation of stringers between adjacent cells without undercutting the sidewalls of a memory cell.
展开▼