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Semiconductor device with first and second wells which have opposite conductivity types and a third well region formed on one of the first and second wells

机译:具有具有相反导电类型的第一阱和第二阱以及形成在第一阱和第二阱之一上的第三阱区域的半导体器件

摘要

Wells of n- and p-type are formed in a p-type substrate. Wells of p- type are also formed in the n-type well. Both the p-type wells are formed by the same process at the same time to make MOS transistors have different threshold voltages. MOS transistors having a long gate length and a low threshold voltage are formed in the p-well in the n-well, and MOS transistors having a short gate length and a high threshold voltage are formed in the p-well at the outside of the n-well. Fuses are formed over the p-type wells in the n-type well at a high density.
机译:在p型衬底中形成n型和p型的阱。在n型阱中也形成p型阱。通过相同的工艺同时形成两个p型阱,以使MOS晶体管具有不同的阈值电压。在n阱的p阱中形成栅极长度长且阈值电压低的MOS晶体管,在p阱的外部的p阱中形成栅极长度短且阈值电压高的MOS晶体管。 n井。熔丝以高密度在n型阱中的p型阱上方形成。

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