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Semiconductor device with first and second wells which have opposite conductivity types and a third well region formed on one of the first and second wells
Semiconductor device with first and second wells which have opposite conductivity types and a third well region formed on one of the first and second wells
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机译:具有具有相反导电类型的第一阱和第二阱以及形成在第一阱和第二阱之一上的第三阱区域的半导体器件
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摘要
Wells of n- and p-type are formed in a p-type substrate. Wells of p- type are also formed in the n-type well. Both the p-type wells are formed by the same process at the same time to make MOS transistors have different threshold voltages. MOS transistors having a long gate length and a low threshold voltage are formed in the p-well in the n-well, and MOS transistors having a short gate length and a high threshold voltage are formed in the p-well at the outside of the n-well. Fuses are formed over the p-type wells in the n-type well at a high density.
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