Coating solutions for use in forming bismuth-based dielectric thin films, and dielectric thin films and memories formed with said coating solutions, as well as processes for production thereof

摘要

Alkoxymetals, -diketones or metal acetates which are metal compounds corresponding independently to Bi, metallic element A (which is at least one member of the group consisting of Ca, Ba, Sr, Pb and Bi) and metallic element B (which is at least one member of the group consisting of Ti, Nb and Ta) are reacted with alcohols, carboxylic anhydrides, glycols, -diketones or dicarboxylic acid monoesters to prepare compounds for inclusion in coating solutions for use in forming Bi-based dielectric thin films. The coating solutions are used to produce dielectric thin films or memories.