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Structure of phase shifting mask and method of manufacturing the same comprising an adhesive layer between a phase shift layer and a light blocking layer

机译:相移掩模的结构及其制造方法,包括在相移层和遮光层之间的粘合剂层

摘要

The structure of a phase shift mask and a method of manufacturing the same are disclosed. A phase shifting mask in accordance with the present invention comprises a light transmitting substrate, a phase shifting layer formed on the upper side of the light transmitting substrate, an adhesive layer formed on the phase shifting layer, and a light shielding layer formed on the adhesive layer. Accordingly, when etching the phase shifting layer, the light shielding layer is protected by the adhesive layer. The adhesive strength is increased due to the adhesive layer formed between the phase shifting layer and the light shielding layer, thereby much improving the reliability of the phase shifting mask.
机译:公开了相移掩模的结构及其制造方法。根据本发明的相移掩模包括光透射基板,在光透射基板的上侧上形成的相移层,在相移层上形成的粘合剂层以及在粘合剂上形成的遮光层。层。因此,当蚀刻相移层时,遮光层被粘合层保护。由于在相移层和光屏蔽层之间形成了粘合层,因此提高了粘合强度,从而大大提高了相移掩模的可靠性。

著录项

  • 公开/公告号US5824438A

    专利类型

  • 公开/公告日1998-10-20

    原文格式PDF

  • 申请/专利权人 LG SEMICON CO. LTD.;

    申请/专利号US19970791577

  • 发明设计人 YONG-KYOO CHOI;JUN-SEOK LEE;CHAN-MIN PARK;

    申请日1997-01-31

  • 分类号G03F9/00;

  • 国家 US

  • 入库时间 2022-08-22 02:38:24

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