PROBE AND CANTILEVER USED FOR ATOMIC FORCE MICROSCOPE, TUNNELLING MICROSCOPE, AND SPIN POLARIZATION TUNNELLING MICROSCOPE, AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To obtain a probe and a cantilever which can be mass-produced, have an atom order fine tip shape, has less plastic deformation, and can be cleaned by growing a crystal consisting of α of a hexagonal columnar shape, and at the same time growing a crystal consisting of α of a hexagonal conical shape on that crystal. ;SOLUTION: When I_n-1-X_-YG_aXA1YN (0≤X, Y, X+Y≤1) is defined as α, the surface of a probe is made of a material consisting of α. A sapphire substrate 1 is arranged in a growth oven so that the surface becomes a surface for growing a buffer layer 2 with α as GaN (X=1, Y=0). For example, the surface is subjected to nitriding for three minutes at 1,050°C in ammonium atmosphere while the pressure in the oven is 650 Torr. Then, the amorphous GaN buffer layer 2 with a film thickness of 20 nm is grown at a temperature of 550°C. Then, the layer 2 is annealed for nine minutes at 1,050°C for forming a single crystal, and then a GaN single crystal flat layer 3 is grown at 1,020°C with a film thickness of 0.5 μm. After that, a columnar part 4 or a conical part 5 is grown by the selective growth method.;COPYRIGHT: (C)1999,JPO