COATING LIQUID FOR SILICA-BASED FILM FORMATION, PRODUCTION OF SILICA-BASED FILM, SILICA-BASED FILM AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain the subject coating liquid capable of lessening volatility during baking, while having heat resistance, having a low dielectric constant of the film therefrom and excellent storage stability at room temperature, by including a specific polysilane and an organic solvent. ;SOLUTION: This coating liquid is obtained by including an organic solvent and a polysilane having 1-100%, based on the total number of silicon atoms, of a group expressed by the formula R⁴O and prepared by reacting 30-100 mol.% of a monoorganotrihalosilane compound expressed by the formula, R¹SiX₃ (R¹ is a 1-6C alkyl or the like; X is a halogen) [e.g. CH₃Si(Cl)₃] with 70-0 mol.% of a diorganohalosilane compound expressed by the formula, R²R³SiX₂ (R² and R³ are each a 1-6C alkyl or the like) [e.g. (CH₃)₂Si(Cl)₂] and then reacting the resulting halogen-containing polysilane with a compound expressed by the formula, R⁴OH (R⁴ is a 1-6C alkyl or the like) (e.g. alcohol, phenol compound, silanol compound).;COPYRIGHT: (C)1999,JPO